unisonic technologies co., ltd 5n80 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-483.e 5 a , 800v n-channel power mosfet ? description the utc 5n80 is a n-channel enhancement mode power mosfet. it use utc advanced technology to provide avalanche rugged technology and low gate charge. it can be applied in high current, high speed switching, switch mode power supplies (smps), consumer and industrial lighting, dc-ac inverters for welding equipment and uninterruptible power supply(ups). ? features * r ds(on) : 2.0 ? (typ.) * avalanche rugged technology * low input capacitance * low gate charge * application oriented characterization ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 5n80l-ta3-t 5n80g-ta3-t to-220 g d s tube 5n80l-tf1-t 5N80G-TF1-T to-220f1 g d s tube 5n80l-tf3-t 5n80g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
5n80 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-483.e ? marking information package marking to-220 to-220f to-220f1
5n80 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-483.e ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v gs =0 v ds 800 v gate-source voltage v gs 30 v drain-gate voltage r gs =20k ? v dgr 800 v drain current (continuous) continuous i d 5.5 a pulsed (note 2) i dm 20 a avalanche energy single pulsed (note 3) e as 320 mj power dissipation to-220 p d 125 w to-220f /to-220f1 40 derating factor to-220 1 w/c to-220f /to-220f1 0.32 junction temperature t j 150 c storage temperature t stg -55~150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area. 3. starting t j =25c, i d =i ar , v dd =50v ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 1 c/w to-220f /to-220f1 3.12
5n80 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-483.e ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v drain-source leakage current i dss v ds =800v, v gs =-0v 25 a gate- source leakage current forward i gss v gs =+30v +100 na reverse v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3 5 v static drain-source on-state resistance r ds(on) v gs =10v, i d =2.5a 1.8 2.5 ? v gs =10v, i d =2.5a, t c =100c 4 on state drain current i d ( on ) v ds >i d ( on ) r ds ( on ) max,v gs =10v 5 a dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 900 1450 pf output capacitance c oss 100 200 pf reverse transfer capacitance c rss 14 20 pf switching parameters total gate charge q g v gs =10v, v dd =120v, i d =5a (note 1, 2) 145 170 nc gate to source charge q gs 11 nc gate to drain charge q gd 27 nc turn-on delay time t d ( on ) v ds =30v, i d =1a, r g =50 ? v gs =10v (note 1, 2) 80 100 ns rise time t r 135 150 ns turn-off delay time t d ( off ) 240 260 ns fall-time t f 120 140 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =5.5a, v gs =0v 2 v reverse recovery time t r r i sd =5.5a,di/dt=100a/s, v dd =80v,t j =150c (note 1) 700 ns reverse recovery charge q rr 7.7 nc reverse recovery current i rrm 22 a source-drain current i sd 5.5 a source-drain current (pulsed) (note 1) i sdm 20 a notes: 1. pulsed: pulse duration=300s, duty cycle 1.5%. 2. essentially independent of operating temperature
5n80 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-483.e ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
5n80 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-483.e ? test circuits and waveforms(cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
5n80 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-483.e ? typical characteristics drain current,i d (a) drain current, i d (a) drain current,i d (a) drain current,i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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